Single-charge devices with ultrasmall Nb/AlOx/Nb trilayer Josephson junctions
R. Dolata, H. Scherer, A. B. Zorin, J. Niemeyer
arXiv:cond-mat/0410288 · DOI 10.1063/1.1855399 · 2004-10-12 · Journal of Applied Physics
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Abstract
Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers. The fabrication process includes electron beam lithography, dry etching, anodization, and planarization by chemical-mechanical polishing. The samples were characterized at temperatures down to 25 mK. In general, all junctions are of high quality and their I-U characteristics show low leakage currents and high superconducting energy gap values of 1.35 meV. The characteristics of the transistors and arrays exhibit some features in the subgap area, associated with tunneling of Cooper pairs, quasiparticles and their combinations due to the redistribution of the bias voltage between the junctions. Total island capacitances of the transistor samples ranged from 1.5 fF to 4 fF, depending on the junction sizes. Devices made of junctions with linear dimensions below 100 nm by 100 nm demonstrate a remarkable single-electron behavior in both superconducting and normal state. We also investigated the area dependence of the junction capacitances for transistor and array samples.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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