Improved Current Densities in MgB2 By Liquid-Assisted Sintering
S. K. Chen, Z. Lockman, M. Wei, B. A. Glowacki, J. L. MacManus-Driscoll
arXiv:cond-mat/0504793 · DOI 10.1063/1.1947374 · 2005-04-29 · Applied Physics Letters
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Abstract
Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was enhanced by a factor of 2 and 10, for temperatures of \~5K and 20K, respectively. The values obtained are approaching those of hot isostatically pressed samples.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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