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Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}

Yoichi Ando, T. Murayama

arXiv:cond-mat/9812334 · DOI 10.1103/PhysRevB.60.R6991 · 1998-12-21 · Physical Review B

T1theoretical55 citations

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Abstract

In-plane resistivity ρ_{ab}, Hall coefficient, and magnetoresistance (MR) are measured in a series of high-quality Bi_{2}Sr_{2-x}La_{x}CuO_{6} crystals with various carrier concentrations, from underdope to overdope. Our crystals show the highest T_c (33 K) and the smallest residual resistivity ever reported for Bi-2201 at optimum doping. It is found that the temperature dependence of the Hall angle obeys a power law T^n with n systematically decreasing with increasing doping, which questions the universality of the Fermi-liquid-like T^2 dependence of the "Hall scattering rate". In particular, the Hall angle of the optimally-doped sample changes as T^{1.7}, not as T^2, while ρ_{ab} shows a good T-linear behavior. The systematics of the MR indicates an increasing role of spin scattering in underdoped samples.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr1.76La0.24CuO6

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24Pressure not reportedzero_resistance
Bi2Sr1.70La0.30CuO6

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30Pressure not reportedzero_resistance
Bi1.8Sr1.57La0.44CuO6+δ

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33Pressure not reportedzero_resistance
Bi2Sr1.43La0.57CuO6

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28.5Pressure not reportedzero_resistance
Bi2Sr1.34La0.66CuO6

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20Pressure not reportedzero_resistance
Bi1.8Sr1.57La0.44CuO6+δ

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33Pressure not reportedonset
Bi2Sr2-xLaxCuO6

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30Pressure not reportedunknown

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