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Enhancement of oxygen isotope effect due to out-of-plane disorder in Bi2Sr2Ln0.4CuO6+δ superconductors

K. Sato, H. Iwasawa, N. C. Plumb, T. Masui, Y. Yoshida, H. Eisaki, H. Bando, A. Ino, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, S. Tajima, Y. Nishihara, D. S. Dessau, Y. Aiura

DOI 10.1103/PhysRevB.80.212501 · Physical Review B

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Abstract

The disorder dependence of the oxygen isotope effect in optimally doped Bi2Sr1.6Ln0.4CuO6+δ superconductors which is introduced into cation sites in the planes adjacent to CuO2 planes is studied. The degree of out-of-plane disorder is controlled by substituting Ln ions with different ionic radii from La to Gd. This type of disorder does not explicitly alter the nodal electronic structure or the underlying Fermi surface but markedly enhances the oxygen isotope exponent at the superconducting transition temperature (αTc). The enhancement in αTc is well explained by the pair-breaking model, suggesting the growth of a pseudogap state around the antinodal region due to the out-of-plane disorder.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr1.6La0.4CuO6+δ

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32.83Pressure not reportedonset
Bi2Sr1.6Nd0.4CuO6+δ

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30.07Pressure not reportedonset
Bi2Sr1.6Eu0.4CuO6+δ

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16.9Pressure not reportedonset
Bi2Sr1.6Gd0.4CuO6+δ

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12.27Pressure not reportedonset

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