Growth of Epitaxial MgB2 Thick Films with Columnar Structures by Using HPCVD
Won Kyung Seong, Ji Yeong Huh, Won Nam Kang, Jeong-Woon Kim, Yong-Seung Kwon, Nam-Keun Yang, Je-Geun Park
arXiv:0709.1884 · DOI 10.1002/CVDE.200706636 · 2007-09-12 · Chemical Vapor Deposition
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Abstract
Epitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by using the hybrid physical chemical vapor deposition (HPCVD) technique. In order to obtain a high magnesium vapor pressure around the substrates, we used a special susceptor having a susceptor cap and achieved a very high growth rate of 0.17 um/min. Hexgonal-shaped columnar structures were observed by cross-sectional and planar view transmission electron microscope (TEM) images. For the 1.7-um-thick film, the Tc was observed to be 40.5 K with a Jc of 1.5 x 10^6 A/cm^2 at 30 K. The vortex pinning mechanism by intercolumnar boundaries will be discussed.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 40.5 | Pressure not reported | unknown |
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