Pumping properties of the hybrid single-electron transistor in dissipative environment
S. V. Lotkhov, A. Kemppinen, S. Kafanov, J. P. Pekola, A. B. Zorin
arXiv:0905.3402 · DOI 10.1063/1.3227839 · 2009-05-20 · Applied Physics Letters
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Abstract
Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.
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