Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors
Michael R. Vissers, Jiansong Gao, Martin Sandberg, Shannon M. Duff, David S. Wisbey, Kent D. Irwin, David P. Pappas
arXiv:1209.4853 · DOI 10.1063/1.4804286 · 2012-09-21 · Applied Physics Letters
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Abstract
We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Ti Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.4 | Pressure not reported | unknown |
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5 | Pressure not reported | unknown |
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