One-dimensional pinning behavior in Co-doped BaFe2As2 thin films
V. Mishev, W. Seeböck, M. Eisterer, K. Iida, F. Kurth, J. Hänisch, E. Reich, B. Holzapfel
arXiv:1401.7518 · DOI 10.1063/1.4838039 · 2014-01-29 · Applied Physics Letters
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Abstract
Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| BaFe2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 24.7 | Pressure not reported | onset |
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