Effect of pressure on superconductivity in doped topological crystalline insulator Sn0.5In0.5Te
V. K. Maurya, R. Jha, Shruti, V. P. S. Awana, S. Patnaik
arXiv:1503.02431 · 2015-03-09
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Abstract
We report on the impact of hydrostatic pressure on the superconductivity of optimally (Indium) doped SnTe which is established to be derived from a topological crystalline insulating phase. Single crystals of Sn1-xInxTe were synthesized by a modified Bridgman method that exhibited maximum superconducting Tc of 4.4 K for x= 0.5. Hydrostatic pressure upto 2.5 GPa was applied on the crystals of Sn0.5In0.5Te and electrical resistivity as a function of temperature and pressure was measured. We observed decrease in onset superconducting transition temperature from 4.4 K to 2.8 K on increasing pressure from ambient to 2.5 GPa. The normal state resistivity also decreased abruptly by an order of magnitude at 0.5 GPa but for higher pressures, the same decreased marginally. From onset, offset and zero resistivity values, dTc/dP of -0.6K/GPa was confirmed. The low temperature normal state resistivity followed T^2 dependence suggesting Fermi liquid behaviour both for ambient and high pressure data. This increase in metallic characteristics accompanied by normal state Fermi liquid behaviour is in accordance with a dome structure for Tc variation with varying carrier concentration.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn0.5In0.5Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.4 | Pressure unresolved | onset |
| Sn0.5In0.5Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.8 | 2.5 GPa | onset |
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