Growth and transport properties under high pressure of PrOBiS2 single crystals

Masanori Nagao; Akira Miura; Ryo Matsumoto; Yuki Maruyama; Satoshi Watauchi; Yoshihiko Takano; Kiyoharu Tadanaga; Isao Tanaka

doi:10.1016/j.ssc.2019.04.007

Growth and transport properties under high pressure of PrOBiS2 single crystals

Masanori Nagao, Akira Miura, Ryo Matsumoto, Yuki Maruyama, Satoshi Watauchi, Yoshihiko Takano, Kiyoharu Tadanaga, Isao Tanaka

arXiv:1904.09402 · DOI 10.1016/j.ssc.2019.04.007 · 2019-04-20 · Solid State Communications

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Abstract

PrOBiS2 single crystals were successfully grown using a KCl flux. The obtained crystals had a plate-like shape with a typical size of 0.5-1.0 mm and well-developed ab-plane. The Pr valence of the grown crystals, as determined by an X-ray absorption fine structure spectroscopy analysis, was almost trivalent. The PrOBiS2 single crystals did not exhibit superconductivity down to 0.25 K. The transport properties under high pressures up to 50 GPa ensured semiconducting behavior for 2-300 K using a diamond anvil cell.