Transport across meso-junctions of highly doped Si with different superconductors

Pradnya Parab; Sangita Bose

doi:10.1016/j.physleta.2020.127115

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Transport across meso-junctions of highly doped Si with different superconductors

Pradnya Parab, Sangita Bose

arXiv:2101.02401 · DOI 10.1016/j.physleta.2020.127115 · 2021-01-07

T1theoretical

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Abstract

We studied the transport properties of meso-junctions of semiconducting (Sm) highly doped Si with different superconductors (Sc) through point contact Andreev reflection (PCAR) spectroscopy. Spectra of low transparency point contacts between Si and In showed an enhancement in the superconducting energy gap of In. This was due to the effect of an additional gap arising from the Schottky barrier at the Sm-Sc interface. For higher transparency Si-Nb and Si-Pb point contacts, no gap enhancement was observed though there were weak sub gap features. These were due to proximity induced interface superconductivity known to occur for Sm-Sc junctions of high transparency.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown
Pb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown