Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film
Renjie Xie, Min Ge, Shaozhu Xiao, Jiahui Zhang, Jiachang Bi, Xiaoyu Yuan, Hee Taek Yi, Baomin Wang, Seongshik Oh, Yanwei Cao, Xiong Yao
arXiv:2406.06112 · DOI 10.1021/acsami.4c05656 · 2024-06-10
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Abstract
Highly crystalline and easily feasible topological insulator-superconductor (TI-SC) heterostructures are crucial for the development of practical topological qubit devices. The optimal superconducting layer for TI-SC heterostructures should be highly resilient against external contaminations and structurally compatible with TIs. In this study, we provide a solution to this challenge by showcasing the growth of a highly crystalline TI-SC heterostructure using refractory TiN (111) as the superconducting layer. This approach can eliminate the need for in-situ cleaving or growth. More importantly, the TiN surface shows high resilience against contaminations during air exposure, as demonstrated by the successful recyclable growth of Bi2Se3. Our findings indicate that TI-SC heterostructures based on nitride films are compatible with device fabrication techniques, paving a path to the realization of practical topological qubit devices in the future.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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