Significant Reduction of the Microwave Surface Resistance of MgB2 Films by Surface Ion Milling
Sang Young Lee, J. H. Lee, Jung Hun Lee, J. S. Ryu, J. Lim, S. H. Moon, H. N. Lee, H. G. Kim, B. Oh
arXiv:cond-mat/0105327 · DOI 10.1063/1.1418026 · 2001-05-16 · Applied Physics Letters
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Abstract
The microwave surface resistance Rs of MgB2 films with the zero-resistance temperature of - 39 K was measured at 8.0 - 8.5 GHz. The MgB2 films were prepared by deposition of boron films on c-cut sapphire, followed by annealing in a vaporized magnesium environment. The Rs appeared significantly reduced by ion milling of the as-grown MgB2 film surface, with the observed Rs of ~ 0.8 mohm at 24 K for an ion-milled MgB2 film as small as 1/15 of the value for the corresponding as-grown MgB2 film. The reduced Rs of the ion-milled MgB2 films is attributed to the effects of the Mg-rich metallic layer existing at the surfaces of the as-grown MgB2 films.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39 | Pressure not reported | zero_resistance |
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