Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
A. V. Pogrebnyakov, J. M. Redwing, J. E. Jones, X. X. Xi, S. Y. Xu, Q. Li, V. Vaithyanathan, D. G. Schlom
arXiv:cond-mat/0304164 · DOI 10.1063/1.1583852 · 2003-04-07 · Applied Physics Letters
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Abstract
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 41.8 | Pressure not reported | unknown |
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