Disorder-induced suppression of superconductivity in the Si(111)−(7×3)-In surface: Scanning tunneling microscopy study
Shunsuke Yoshizawa, Howon Kim, Yukio Hasegawa, Takashi Uchihashi
DOI 10.1103/PhysRevB.92.041410 · Physical Review B
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Abstract
The critical effect of disorder on the two-dimensional (2D) surface superconductor Si(111)−(7×3)-In is clarified by comparing two regions with different degrees of disorder. Low-temperature scanning tunneling microscopy measurements reveal that superconductivity is retained in the less disordered region, judging from the characteristic differential conductance (dI/dV) spectra and from the formation of vortices under magnetic fields. In striking contrast, the absence of those features in the highly disordered region shows that superconductivity is strongly suppressed there. Analysis of observed zero-bias anomalies in dI/dV spectra allows us to estimate the reduction in the transition temperature Tc, which explains the fate of superconductivity in each region.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Si(111)-(7x3)-In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3 | Pressure not reported | unknown |
| Si(111)-(7x3)-In Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.4 | Pressure not reported | unknown |
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