Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
C. Marcenat, J. Kacmarcik, R. Piquerel, P. Achatz, G. Prudon, C. Dubois, B. Gautier, J. C. Dupuy, E. Bustarret, L. Ortega, T. Klein, J. Boulmer, T. Kociniewski, D. Debarre
arXiv:0910.5378 · DOI 10.1103/PhysRevB.81.020501 · 2009-10-28
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Abstract
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006).
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Si:B Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.6 | Pressure not reported | unknown |
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