MgB2 thick film with TC = 40.2 K deposited on sapphire substrate
Kaicheng Zhang, Li-li Ding, Cheng-gang Zhuang, Li-ping Chen, Chinping. Chen*, Qing-rong Feng
arXiv:cond-mat/0606564 · DOI 10.1002/pssa.200522262 · 2006-06-22 · physica status solidi (a)
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Abstract
We have successfully deposited thick MgB2 film on the (0001) crystalline surface of sapphire by the method of hybrid physical-chemical vapor deposition (HPCVD). The film thickness is about 1.3 micron. It has a dense and interlaced structure. The film surface, shown by SEM, is stacked with MgB2 microcrystals. Transport measurements by the 4-probe technique have demonstrated that its critical temperature is about 40.2 K, with a sharp transition width of 0.15 K. The residual resistivity ratio (RRR) is about 11. By extrapolation, HC2(0) is determined as 13.7 T from the magneto-transport measurement. Also by hysteresis measurement and applying the Bean model, the critical current density is estimated as 5*1010 A/m2 in zero magnetic field. The present work has demonstrated that HPCVD is an effective technique to fabricate the MgB2 thick film with decent superconducting properties. Hence, it is important for the future superconducting application, in particular, as a crucial preliminary stage to fabricate superconducting tape.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 40.2 | Pressure not reported | unknown |
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