Tc max
35.0 K
Tc ambient
23.5 K
arXiv year
2008
Papers
51
Tc exp.
35.0 K
Tc theo.
30.0 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1312.2107, confirmed by 2 papers
Doping variants (100)
| Formula | Tc max (K) | Tc amb. (K) | Papers | Doping |
|---|---|---|---|---|
| Ba(Fe0.90Ir0.10)2As2 | 28.0 | 28.0 | 1 | 0.100 |
| Ba(Fe0.9Ir0.1)2As2 | 28.0 | 28.0 | 1 | 0.100 |
| Ba(Fe0.965Co0.035)2As2 | 27.9 | — |
Evidence (58 records from 51 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 35.0 | — | thin_film | resistivity, susceptibility | — | 2013 | T1 | 1312.2107 |
| 35.0 | 3.0 | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.172506 |
| 34.0 |
Structure
- Crystal structure
- ThCr2Si2 structure
- Space group
- I4/mmm (No. 139)
- Lattice a (Å)
- 5.615
- Lattice c (Å)
- 12.945
Superconducting parameters
- Pairing symmetry
- s_pm
- Hc2
- 66.0 T (0 K)
- λ_eph (e–ph coupling)
- 0.33
- ω_log
- 206 K
Competing orders
- Competing order
- SDW
- T_SDW
- 140.0 K
- T_AFM
- 142.0 K
Samples & pressure
- Sample form
- single_crystal
- Substrate
- MgO
- Pressure type
- hydrostatic
- Doping level
- 0.045