Tc max
35.0 K
Tc ambient
23.5 K
arXiv year
2008
Papers
50
Tc exp.
35.0 K
Tc theo.
30.0 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1312.2107, confirmed by 2 papers
Doping variants (100)
Evidence (57 records from 50 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 35.0 | — | thin_film | resistivity, susceptibility | — | 2013 | T1 | 1312.2107 |
| 35.0 | 3.0 | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.172506 |
| 34.0 | 1.0 | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.144118 |
| 31.0 | 5.5 | — | resistivity | — | 2009 | T1 | 0912.2376 |
| 30.5 | 5.5 | — | resistivity | — | 2009 | T1 | 0912.2376 |
| 30.0 | 0.8 | — | — | unknown | 2024 | T1 | DOI: 10.1103/PhysRevResearch.6.013121 |
| 29.0 | — | — | — | — | 2008 | — | 0807.1896 |
| 28.4 | 5.5 | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.144118 |
| 26.0 | — | — | resistivity | — | 2013 | T1 | 1309.2331 |
| 25.0 | — | single_crystal | — | — | 2016 | T3 | 1612.02839 |
| 25.0 | — | single_crystal | — | s_pm | 2010 | T1 | 1007.5215 |
| 25.0 | 3.0 | — | resistivity | — | 2008 | T3 | 0808.0718 |
| 24.7 | — | thin_film | resistivity | — | 2014 | T1 | 1401.7518 |
| 23.5 | — | single_crystal | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.064521 |
| 22.5 | — | single_crystal | resistivity | — | 2009 | T1 | 0907.4429 |
| 22.0 | — | single_crystal | resistivity | — | 2020 | T1 | DOI: 10.1103/PhysRevB.102.134507 |
| 21.5 | — | thin_film | resistivity | — | 2010 | — | 0910.0268 |
| 20.0 | — | single_crystal | — | s_pm | 2010 | T1 | 1007.5215 |
| 20.0 | — | thin_film | — | — | 2009 | T3 | 0907.0666 |
| 17.0 | 11.0 | single_crystal | resistivity | — | 2010 | T1 | 1003.0913 |
| 17.0 | 11.0 | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.224511 |
| 17.0 | — | thin_film | resistivity | — | 2010 | — | 1001.3615 |
| 14.0 | — | single_crystal | neutron | — | 2017 | — | 1609.02027 |
| 13.0 | 11.5 | single_crystal | resistivity | — | 2010 | T1 | 1003.0913 |
| 13.0 | 11.5 | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.224511 |
| 10.0 | — | thin_film | resistivity, susceptibility | — | 2013 | T1 | 1312.2107 |
| 10.0 | 2.6 | single_crystal | susceptibility | — | 2010 | — | 1010.3863 |
| — | — | — | resistivity | — | 2025 | — | 2507.08428 |
| — | — | single_crystal | STM | — | 2023 | T1 | DOI: 10.1103/PhysRevMaterials.7.034801 |
| — | — | single_crystal | — | — | 2022 | T1 | DOI: 10.1103/PhysRevLett.129.187002 |
| — | — | thin_film | — | — | 2020 | T1 | 2001.00277 |
| — | — | single_crystal | ARPES | — | 2020 | T1 | DOI: 10.1103/PhysRevMaterials.4.034801 |
| — | — | single_crystal | ARPES | — | 2019 | T1 | DOI: 10.1103/PhysRevB.100.024517 |
| — | — | single_crystal | ARPES | — | 2019 | T1 | DOI: 10.1103/PhysRevLett.123.066402 |
| — | — | single_crystal | ARPES | — | 2018 | T1 | DOI: 10.1103/PhysRevB.97.121107 |
| — | — | single_crystal | ARPES | — | 2017 | T1 | DOI: 10.1103/PhysRevB.96.060501 |
| — | — | single_crystal | STM | s_pm | 2016 | T1 | 1602.04937 |
| — | 3.6 | single_crystal | resistivity | — | 2015 | T1 | DOI: 10.1103/PhysRevB.92.245133 |
| — | 3.6 | single_crystal | — | — | 2015 | T1 | 1511.09005 |
| — | — | thin_film | — | — | 2014 | T3 | 1404.5375 |
| — | — | — | resistivity | — | 2013 | T1 | 1309.1641 |
| — | — | thin_film | resistivity | — | 2010 | T1 | 1011.5721 |
| — | — | single_crystal | ARPES | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.060507 |
| — | — | — | — | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.214503 |
| — | — | — | — | — | 2010 | T1 | 1004.1943 |
| — | — | thin_film | — | — | 2010 | T1 | 1005.2021 |
| — | — | single_crystal | neutron | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.140501 |
| — | — | single_crystal | resistivity | — | 2009 | T1 | 0903.4236 |
| — | — | — | — | s_pm | 2009 | T3 | 0911.1461 |
| — | — | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.214439 |
| — | — | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.220517 |
| — | — | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.140508 |
| — | 5.5 | single_crystal | resistivity | — | 2009 | T1 | 0904.4488 |
| — | ambient | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.214520 |
| — | 2.8 | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.214520 |
| — | — | — | — | s_pm | 2008 | T1 | 0807.4408 |
| — | — | single_crystal | resistivity | — | 2008 | T1 | DOI: 10.1103/PhysRevLett.101.117004 |
Structure
- Crystal structure
- ThCr2Si2 structure
- Space group
- I4/mmm (No. 139)
- Lattice a (Å)
- 5.615
- Lattice c (Å)
- 12.945
Superconducting parameters
- Pairing symmetry
- s_pm
- Hc2
- 66.0 T (0 K)
- λ_eph (e–ph coupling)
- 0.33
- ω_log
- 206 K
Competing orders
- Competing order
- SDW
- T_SDW
- 140.0 K
- T_AFM
- 142.0 K
Samples & pressure
- Sample form
- single_crystal
- Substrate
- (La,Sr)(Al,Ta)O3
- Pressure type
- hydrostatic
- Doping level
- 0.045